Infineon FF150R12KS4

Infineon FF150R12KS4
#FF150R12KS4 Infineon FF150R12KS4 New IGBT Modules 1200V 150A DUAL, FF150R12KS4 pictures, FF150R12KS4 price, #FF150R12KS4 supplier
-------------------------------------------------------------------
Email: sales@shunlongwei.com

-------------------------------------------------------------------
Product Category: IGBT Modules
Manufacturer: Infineon
RoHS: YES
Product: IGBT Silicon Modules
Configuration: Dual
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 3.2 V
Continuous Collector Current at 25 C: 225 A
Gate-Emitter Leakage Current: 400 nA
Pd - Power Dissipation: 1.25 kW
Package / Case: 62 mm
Maximum Operating Temperature: + 125 C
Brand: Infineon Technologies
Height: 30.5 mm
Length: 106.4 mm
Maximum Gate Emitter Voltage: +/- 20 V
Minimum Operating Temperature: - 40 C
Mounting Style: Screw
Factory Pack Quantity: 10
Width: 61.4 mm

IGBT Modules 1200V 150A DUAL

0 comments:

Post a Comment